Nano-imaging of strain-tuned stripe textures in a Mott crystal
نویسندگان
چکیده
منابع مشابه
Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging.
Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be radically different from that characterized by free electrons in conventional metals. We report on the electronic properties of a prototypical correlated insulato...
متن کاملMechanical Characteristics and Failure Mechanism of Nano-Single Crystal Aluminum Based on Molecular Dynamics Simulations: Strain Rate and Temperature Effects
Besides experimental methods, numerical simulations bring benefits and great opportunities to characterize and predict mechanical behaviors of materials especially at nanoscale. In this study, a nano-single crystal aluminum (Al) as a typical face centered cubic (FCC) metal was modeled based on molecular dynamics (MD) method and by applying tensile and compressive strain loadings its mechanical ...
متن کاملa swot analysis of the english program of a bilingual school in iran
با توجه به جایگاه زبان انگلیسی به عنوان زبانی بین المللی و با در نظر گرفتن این واقعیت که دولت ها و مسئولان آموزش و پرورش در سراسر جهان در حال حاضر احساس نیاز به ایجاد موقعیتی برای کودکان جهت یاد گیری زبان انگلیسی درسنین پایین در مدارس دو زبانه می کنند، تحقیق حاضر با استفاده از مدل swot (قوت ها، ضعف ها، فرصتها و تهدیدها) سعی در ارزیابی مدرسه ای دو زبانه در ایران را دارد. جهت انجام این تحقیق در م...
15 صفحه اولPerformance of Nano-Submicron-Stripe Pd Thin-Film Temperature Sensors
Dozens of small dual-beam thin-film temperature sensors with a total width down to 430 nm were fabricated and tested. The sensors were all made from 90-nm-thick Pd thin films, where the width of the narrow stripes was 70-100 nm and that of the wide ones was 210-800 nm. Two different calibration methods showed consistent and repeatable sensitivities of 0.7-1.2 μV/K for the sensors, confirming th...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: npj Quantum Materials
سال: 2021
ISSN: 2397-4648
DOI: 10.1038/s41535-021-00339-0